ARH Sapphire Co., Ltd
To be the best sapphire product supplier.
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4 Inch C Plane Orientation Single Side Polished LED Sapphire Substrate
Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal conductivity, high hardness, infrared transmission and good chemical stability. Widely used in many fields of industry, national defense and scientific research (such as high-temperature infrared windows, etc.). At the same time, it is also a widely used single crystal substrate material, and it is the first choice for the blue, violet, and white light emitting diode (LED) and blue laser (LD) industries (the sapphire substrate needs to be epitaxial gallium nitride film first) , Is also an important superconducting film substrate.
Generally, the epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature and the device quality is good; secondly, sapphire is very stable and can be used in the high-temperature growth process; finally, sapphire has high mechanical strength and is easy to handle And cleaning. Therefore, most processes generally use sapphire as the substrate.
The C-Plane sapphire substrate is used to grow III-V and II-VI group deposited films, such as gallium nitride, which can produce blue LED products, laser diodes, and infrared detector applications. This is mainly because the process of sapphire crystal growth along the C axis is mature, the cost is relatively low, and the physical and chemical properties are stable. The technology for epitaxial growth on the C surface is mature and stable. The C axis has crystal gloss, and the other axes have negative gloss; the C plane is flat and it is best to cut.
R-Plane sapphire wafer
Differently deposited silicon externally grown crystals grown on the substrate are used in microelectronic integrated circuits. In addition, in the process of epitaxial silicon growth and film formation, high-speed integrated circuits and pressure sensors can also be formed. R-type substrate growth can also be used in the production of mounds, other superconducting components, high-resistance resistors, and gallium arsenide. Slightly more difficult to cut than A Plane.
Produc Requirements of 2 inch sapphire wafer
|
Parameter |
Specification |
| Crystal Orientation | C-axis (0001) miscut to M |
| Mis-Orientation Towards m-aixs | 0.2° off axis ± 0.1°Towards M axis |
| Mis Orientation Towards a-axis Primary Flat | 0°± 0.25° |
| Diameter | 100mm ± 0.10mm |
| Thickness | 650um ± 10um |
| Orientation Flat Location | A-axis ± 0.3° |
| Major Flat Length | 30.0mm± 1.0mm |
| Surface Finish | Epi Polished one side, Ra＜0.3nm |
| Back Surface | Ra =1.0±0.2um |
| Edge Condition | Edge defect not to exceed SEMI M3-91, Table 2 |
| Bevel | T Size |
| TTV | ＜ 10 um |
| LTV | ＜3 um(5*5um) |
| Bow | -10~0um |
| Warp | ＜15 um |
| Wafer ID | N/A |
| Packaging | Class 100 clean room environment, in cassettes of 25. |
FQA
1. Are you a trading company or factory?
We are a professional factory of sapphire products, also a trading company .
2.Can you do customized products?
Yes, we specialized in customized production or OEM work.
CAD,3D drawing are needed.
3.Could you provide samples?
Yes, we could provide samples with a charge, but if you place the order with a quality above 100pcs, the sample charge will be refunded.
4.What’s the delivery time?
It depends on the type of products and the quality.
For watch case, the regular time is around 5-8 weeks for 200pcs according to the difficulty of the processing.
5.How about the payment?
T/T payment is prefered.
6.How about the delivery?
Mostly by air, like DHL, Fedex.